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| FDW2502PZ March 2000 PRELIMINARY FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V -12V). Features * -4.4 A, -20 V. RDS(ON) = 0.035 @ V GS = -4.5 V RDS(ON) = 0.057 @ V GS = -2.5 V. * Extended V GSS range (12V) for battery applications. * ESD protection diode (note 3). * High performance trench technology for extremely low RDS(ON) . * Low profile TSSOP-8 package. Applications * Load switch * Motor drive * DC/DC conversion * Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25oC unless otherwise noted Parameter Ratings -20 12 (Note 1a) Units V V A W C -4.4 -30 1.0 0.6 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 C/W Package Marking and Ordering Information Device Marking 2502PZ (c)2000 Fairchild Semiconductor Corporation Device FDW2502PZ Reel Size 13'' Tape width 12mm Quantity 3000 units FDW2502PZ Rev. B (W) FDW2502PZ Electrical Characteristics Symbol BV DSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C V DS = -16 V, V GS = -12 V, V GS = 12 V V GS = 0 V V DS = 0 V V DS = 0 V Min -20 Typ Max Units V Off Characteristics -17 -1 -10 10 mV/C A A A On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C V GS = -4.5 V, ID = -4.4 A V GS = -4.5 V, ID = -4.4 ,TJ =125C V GS = -2.5 V, ID = -3.3 A V GS = -4.5 V, V DS = -5 V V DS = -5 V, ID = -4.4 A -0.4 -1.0 3.1 0.028 0.039 0.043 -1.5 V mV/C 0.035 0.056 0.057 A ID(on) gFS -30 17 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = -10 V, f = 1.0 MHz V GS = 0 V, 1330 552 153 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 12 V DD = -10 V, V GS = -4.5 V, ID = -1 A, RGEN = 6 19 60 37 V DS = -5 V, V GS = -4.5 V ID = -4.4 A, 14 3.0 3.9 25 40 100 70 20 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while R CA is determined by the user's board design. a) b) RJA is 125/W (steady state) when mounted on 1 inch copper pad on FR-4. RJA is 250/W (steady state) when mounted on minimum copper pad on FR-4. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -0.83 A Voltage -0.83 (Note 2) A V -0.7 -1.2 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDW2502PZ Rev. B (W) FDW2502PZ Typical Characteristics 30 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE V GS = -4.5V - ID , DRAIN CURRENT (A) -4.0V 20 -2.5V -3.0V -3.5V 2 1.8 V GS = -2.5V 1.6 -3.0V 1.4 -3.5V 1.2 -4.0V 1 -4.5V 10 -2.0V 0 0 1 2 3 - V DS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 15 20 25 30 -ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 1.6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 1.4 RDS(ON) ON-RESISTANCE (OHM) , ID = -4.4A V GS = - 4.5V ID = -4.4 A 0.1 0.08 1.2 0.06 1 T A = 125o C 0.04 TA = 25o C 0.8 0.02 0.6 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC) 0 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 30 V DS = - 5V 25 -ID, DRAIN CURRENT (A) 125o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) TA = -55o C 25o C 10 1 0.1 V GS = 0V TA = 125o C 20 15 10 0.01 0.001 0.0001 25o C -55o C 5 0 0 1 2 3 4 -V GS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2502PZ Rev. B (W) FDW2502PZ Typical Characteristics 5 -V GS, GATE-SOURCE VOLTAGE (V) ID = - 4.4A 4 VDS = - 5V 2100 1800 -10V -15V CAPACITANCE (pF) 1500 1200 900 COSS 600 300 CRSS CISS f = 1MHz V GS = 0 V 3 2 1 0 0 3 6 9 12 15 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100 s 1ms 10ms 100ms 1 V GS = -4.5V SINGLE PULSE R JA = 250o C/W TA = 25 oC 0.01 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) DC 1s 10s 20 Figure 8. Capacitance Characteristics. 15 SINGLE PULSE RJA = 250C/W T A = 25C 10 0.1 5 0 0.01 0.1 1 t 1, TIME (sec) 10 100 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) + RJA RJA = 250 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDW2502PZ Rev. B (W) TSSOP-8 Package Dimensions TSSOP-8 (FS PKG Code S4) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in millimeters Part Weight per unit (gram): 0.0334 January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D |
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